Chapter 90 · Optical, measuring, checking, precision, medical or surgical instruments and apparatus
HS 9001: optical elements, lenses and fibres
159 catalogue products are classified under heading 9001.
Products under HS 9001
97–144 of 159 products
Silicon carbide (4H-SiC Epitaxial Wafer) wafers, dia 101 mm, thick 0.35 mm
- CAS
- 409-21-2
- Formula
- CSi
- MW
- 40.1 g/mol
ZX-017352
Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm
- CAS
- 409-21-2
- Formula
- CSi
- MW
- 40.1 g/mol
ZX-017355
Silicon substrate (single side polished), P-type, diam. × thickness 1 in. × 300 - 400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017159
Silicon substrate (single side polished), P-type, diam. × thickness 2 in. × 300 - 400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017160
Silicon substrate, single side polished, 10 mm x 10 mm x 1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017161
Silicon wafer (single substrase), n-type, contains Arsenic as dopant, diam. × thickness 4 in. × 0.2 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017358
Silicon wafer (single substrase), N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017359
Silicon wafer (single substrase), n-type, contains Phosphorus as dopant, diam. × thickness 2 inch x 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017360
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. × thickness 2 in. × 0.1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017362
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. x thickness 100 mm x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017361
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, size × thickness 125 mm × 125 mm × 0.2 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017363
Silicon wafer (single substrase), p-type, contains Boron as dopant, diam. × thickness 2 inch x 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017364
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 4 inch × 0.525mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017181
Strontium titanium oxide substrate, 10 mm x 10 mm x 0.5 mm, polished one side, orientation, 99.99%
- CAS
- 12060-59-2
- Formula
- O3SrTi
- MW
- 183.49 g/mol
ZX-017369
Strontium titanium oxide substrate, 10 mm x 10 mm x 5 mm
- CAS
- 12060-59-2
- Formula
- O3SrTi
- MW
- 183.49 g/mol
ZX-017370
Strontium titanium oxide substrate, L × W × thickness 10 mm × 10 mm × 0.5 mm
- CAS
- 12060-59-2
- Formula
- O3SrTi
- MW
- 183.49 g/mol
ZX-017371
Strontium titanium oxide wafer, diam. × thickness 1 in x 0.5 mm
- CAS
- 12060-59-2
- Formula
- O3SrTi
- MW
- 183.49 g/mol
ZX-017372
Other headings in chapter 90
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