A–Z index

Chemicals starting with S

2,250 products in alphabetical order. Pick another letter, or search by name, CAS number or formula.

2,250 products · page 7 of 23List Grid

Silicon carbide nanopowder (β), APS 10 nm, 97%+

ZX-016681

409-21-2

CSi

40.10

Silicon carbide nanopowder (β), APS 20-30 nm, 97%+

ZX-016682

409-21-2

CSi

40.10

Silicon carbide nanopowder (β), APS 40-55 nm, 99.9%

ZX-016684

409-21-2

CSi

40.10

Silicon carbide nanopowder (β), APS 40-55 nm, 99%+

ZX-016683

409-21-2

CSi

40.10

Silicon carbide nanopowder (β), APS 50-60 nm, 97.5%+

ZX-016685

409-21-2

CSi

40.10

Silicon carbide nanowhisker, 0.1-2.5 μm, beta, 99%+

ZX-016686

409-21-2

CSi

40.10

Silicon carbide sputtering target, diam. x thickness 1 inch × 3 mm, 99%

ZX-017466

409-21-2

CSi

40.10

Silicon carbide sputtering target, diam. x thickness 4 inch x 6 mm, 99.5%

ZX-016282

409-21-2

CSi

40.10

Silicon carbide substrates (N-Type SiC), dimensions. × thickness 10 x 10 mm × 0.3 mm

ZX-017356

409-21-2

CSi

40.10

Silicon carbide, 0.1 - 5 µm, 99.9%

ZX-017467

409-21-2

CSi

40.10

Silicon Dioxide Colloidal Hydrate Confirming to, IP

ZX-019453 · IP

63231-67-4

—

Silicon dioxide granules, 1-3 mm, 99.99%

ZX-016283

14808-60-7

O₂Si

60.08

Silicon dioxide granules, 1-5 mm, 99.99%

ZX-016284

14808-60-7

O₂Si

60.08

Silicon dioxide pieces, dia 1-3 mm, 99.999%

ZX-016285

60676-86-0

O₂Si

60.08

Silicon dioxide sputtering target, diam. x thickness 304.8 mm x 10 mm, 99.99% elastomer bonding to Copper backing plate 304.8mm dia x 16 mm thick

ZX-016286

14808-60-7

O₂Si

60.08

Silicon dioxide, -325 mesh, 99.5%

ZX-014391 · Puriss

60676-86-0

O₂Si

60.08

Silicon dioxide, -325 mesh, BP

ZX-038109 · BP

60676-86-0

O₂Si

60.08

Silicon dioxide, ≥99.9%

ZX-014396 · Puriss

60676-86-0

O₂Si

60.08

Silicon dioxide, ≥99.99%

ZX-014397

60676-86-0

O₂Si

60.08

Silicon dioxide, 98%

ZX-014392

14808-60-7

O₂Si

60.08

Silicon dioxide, 99.999%

ZX-014394 · Puriss

14808-60-7

O₂Si

60.08

Silicon dioxide, 99%

ZX-014393

14808-60-7

O₂Si

60.08

Silicon dioxide, acid washed and calcined

ZX-014395

14808-60-7

O₂Si

60.08

Silicon dioxide,acid purified, sand

ZX-014398

60676-86-0

O₂Si

60.08

Silicon granules 3-6 mm 99.99%

ZX-015933

7440-21-3

28.09

Silicon high vacuum grease (lab)

ZX-014399 · Synthesis

—

Silicon nanopowder, APS 130 nm, 99.5%

ZX-016431

7440-21-3

28.09

Silicon Nanopowder, APS 20-30 nm, 98%+

ZX-016432

7440-21-3

28.09

Silicon Nanopowder, APS 30-50 nm, 98%

ZX-016433

7440-21-3

28.09

Silicon Nanopowder, APS 50-70 nm, 98%

ZX-016434

7440-21-3

28.09

Silicon Nitride Nanopowder (β-phase), APS 2 μm, 99.9%

ZX-016687

12033-89-5

N₄Si₃

140.28

Silicon Nitride Nanopowder, APS 0.3-0.5 μm, 99.9%

ZX-016688

12033-89-5

N₄Si₃

140.28

Silicon Nitride Nanopowder, APS 0.3-0.5 μm, 99.99%

ZX-016689

12033-89-5

N₄Si₃

140.28

Silicon Nitride Nanopowder, APS 0.6-0.8 μm, 99.9%

ZX-016690

12033-89-5

N₄Si₃

140.28

Silicon Nitride Nanopowder, APS 0.8-1 μm, 99.9+%

ZX-016691

12033-89-5

N₄Si₃

140.28

Silicon nitride nanopowder, APS 2 μm, (α-phase) 99.9+%

ZX-016692

12033-89-5

N₄Si₃

140.28

Silicon Nitride, nanopowder, APS 15-30 nm, 98.5%+

ZX-016693

12033-89-5

N₄Si₃

140.28

Silicon oil, -40 to 200 °C

ZX-014400

63148-62-9

[-Si(CH₃)₂O-]n

—

Silicon oil, for oil baths upto 250 °C

ZX-014401

63148-62-9

[-Si(CH₃)₂O-]n

—

Silicon optical (mono crystalline) windows, 170 mm dia, 25 mm thick, 99.999%

ZX-017151

7440-21-3

28.09

Silicon optical (mono crystalline) windows, 25 mm dia, 3 mm thick, 99.999%

ZX-017152

7440-21-3

28.09

Silicon optical (mono crystalline) windows, 30 mm dia, 10 mm thick, 99.999%

ZX-017153

7440-21-3

28.09

Silicon optical (mono crystalline) windows, 30 mm dia, 15 mm thick, 99.999%

ZX-017154

7440-21-3

28.09

Silicon optical (mono crystalline) windows, 40 mm dia, 10 mm thick, 99.999%

ZX-017155

7440-21-3

28.09

Silicon optical (mono crystalline) windows, 90 mm dia, 15 mm thick, 99.999%

ZX-017156

7440-21-3

28.09

Silicon optical (mono crystalline) windows, 90 mm dia, 20 mm thick, 99.999%

ZX-017157

7440-21-3

28.09

Silicon optical, mono crystalline, windows, 90 mm dia, 10 mm thick, 99.999%

ZX-017158

7440-21-3

28.09

Silicon oxide dispersion (25 wt%, 30 nm) in water

ZX-016694

—

Silicon Oxide Dispersion (30 Wt%, 12-30 Nm) In 2-Propanol

ZX-016695

—

Silicon oxide nanopowder (quartz) 99.95%

ZX-016569

7631-86-9

O₂Si

60.08

Silicon oxide nanopowder, APS 15 nm, 99.5%

ZX-016570

7631-86-9

O₂Si

60.08

Silicon oxide nanopowder, APS 20 nm, 99.5%

ZX-016571

7631-86-9

O₂Si

60.08

Silicon oxide nanopowder, APS 80 nm, 99%

ZX-016572

7631-86-9

O₂Si

60.08

Silicon pieces, ≤10 mm, 99.9%

ZX-015937

7440-21-3

28.09

Silicon pieces, 1-10 mm, 99.99999%

ZX-015934

7440-21-3

28.09

Silicon pieces, 1-3 mm, 99%

ZX-015935

7440-21-3

28.09

Silicon pieces, dia 1-3 mm, 99.99%

ZX-015936

7440-21-3

28.09

Silicon pieces, dia 1-8 mm, 99.999%

ZX-016287

7440-21-3

28.09

Silicon powder, - 70 + 170 mesh, 99.999%

ZX-015256 · Synthesis

7440-21-3

28.09

Silicon powder, -325 mesh, 99.9%

ZX-015257

7440-21-3

28.09

Silicon powder, -325 mesh, 99.99%

ZX-015258

7440-21-3

28.09

Silicon powder, -325 mesh, 99.999%

ZX-015259 · Synthesis

7440-21-3

28.09

Silicon powder, <40 μm, 99.9%

ZX-015262

7440-21-3

28.09

Silicon powder, −200 mesh, 98%

ZX-015265

7440-21-3

28.09

Silicon powder, −325 mesh, 99% trace metals basis

ZX-015266

7440-21-3

28.09

Silicon powder, 98.5%

ZX-015260

7440-21-3

28.09

Silicon powder, 99.95%

ZX-015261

7440-21-3

28.09

Silicon powder, crystalline, -325 mesh, 99.5%

ZX-015263

7440-21-3

28.09

Silicon powder, max. particle size 45 μm, 99.5%

ZX-015264

7440-21-3

28.09

Silicon resin 1805

ZX-014402

—

Silicon rod, dia 2.5 cm, 99.9%

ZX-015652

7440-21-3

28.09

Silicon rod, dia 25 mm, 99.99%

ZX-015653

7440-21-3

28.09

Silicon spray, heavy duty

ZX-014403 · Synthesis

—

Silicon sputtering target (with back plate), diam. x thickness 4 inch x 4 mm, 99.99%

ZX-016288

7440-21-3

28.09

Silicon sputtering target, diam. × thickness 2 inch × 3 mm, 99.999%

ZX-016290

7440-21-3

28.09

Silicon sputtering target, diam. × thickness 50 mm × 6 mm, 99.99%

ZX-016291

7440-21-3

28.09

Silicon sputtering target, diam. x thickness 4 inch x 4 mm, 99.99%

ZX-016289

7440-21-3

28.09

Silicon substrate (single side polished), P-type, diam. × thickness 1 in. × 300 - 400 μm

ZX-017159

7440-21-3

28.09

Silicon substrate (single side polished), P-type, diam. × thickness 2 in. × 300 - 400 μm

ZX-017160

7440-21-3

28.09

Silicon substrate, ± 0.5o

ZX-017164

7440-21-3

28.09

Silicon substrate, single side polished, 10 mm x 10 mm x 1 mm

ZX-017161

7440-21-3

28.09

Silicon substrate, single side polished, P-type, contains boron as dopant, diam. × thickness 25 mm × 1 mm

ZX-017162

7440-21-3

28.09

Silicon substrate, single side polished, P-type, contains boron as dopant, diam. × thickness 50 mm × 1 mm

ZX-017163

7440-21-3

28.09

Silicon tetraacetate, 99.00%

ZX-019701

562-90-3

C₈H₁₂O₈Si

264.26

Silicon wafer (double side polished), Intrinsic, dia x thickness 100 mm x 500 µm

ZX-017165

7440-21-3

28.09

Silicon wafer (double side polished), Intrinsic, dia x thickness 150 mm x 625 µm

ZX-017166

7440-21-3

28.09

Silicon wafer (single side polished), diam. × thickness 50.8 mm × 0.3 mm

ZX-017167

7440-21-3

28.09

Silicon wafer (single side polished), N (Phosphorous doped), diam. x thickness 50.8 mm x 280 μm

ZX-017168

7440-21-3

28.09

Silicon wafer (single side polished), N (Phosphorous doped), diam. x thickness 76 mm x 380 μm

ZX-017169

7440-21-3

28.09

Silicon wafer (single side polished), N-type, contains phosphorus as dopant, diam. x thickness 2 in. x 0.275 mm

ZX-017170

7440-21-3

28.09

Silicon wafer (single side polished), N-type, contains phosphorus as dopant, diam. x thickness 2 in. x 0.5 mm

ZX-017171

7440-21-3

28.09

Silicon wafer (single side polished), N-type, diam. x thickness 4 in x 0.525 mm

ZX-017172

7440-21-3

28.09

Silicon wafer (single side polished), P-type, contains boron as dopant, diam. × thickness 2 in. x 0.5 mm

ZX-017174

7440-21-3

28.09

Silicon wafer (single side polished), P-type, contains boron as dopant, diam. x thickness 2 in. x 0.5 mm

ZX-017173

7440-21-3

28.09

Silicon wafer (single side polished), P-type, diam. x thickness 2 in x 285 µm

ZX-017357

7440-21-3

28.09

Silicon wafer (single substrase), n-type, contains Arsenic as dopant, diam. × thickness 4 in. × 0.2 mm

ZX-017358

7440-21-3

28.09

Silicon wafer (single substrase), N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm

ZX-017359

7440-21-3

28.09

Silicon wafer (single substrase), n-type, contains Phosphorus as dopant, diam. × thickness 2 inch x 0.3 mm

ZX-017360

7440-21-3

28.09

Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. × thickness 2 in. × 0.1 mm

ZX-017362

7440-21-3

28.09

Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. x thickness 100 mm x 0.525 mm

ZX-017361

7440-21-3

28.09