CAS Registry Number
Silicon granules 3-6 mm 99.99% CAS 7440-21-3
77 listings share this CAS number. They differ in grade, purity or pack, so compare them below and add the right one to your quote list.
CAS number7440-21-3
FormulaSi
Molar mass28.09 g/mol
GradesSynthesis
InChIKeyXUIMIQQOPSSXEZ-UHFFFAOYSA-N
Also known as Silicon 3-6 mm
All listings for CAS 7440-21-3
Silicon optical (mono crystalline) windows, 170 mm dia, 25 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017151
Silicon optical (mono crystalline) windows, 25 mm dia, 3 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017152
Silicon optical (mono crystalline) windows, 30 mm dia, 10 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017153
Silicon optical (mono crystalline) windows, 30 mm dia, 15 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017154
Silicon optical (mono crystalline) windows, 40 mm dia, 10 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017155
Silicon optical (mono crystalline) windows, 90 mm dia, 15 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017156
Silicon optical (mono crystalline) windows, 90 mm dia, 20 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017157
Silicon optical, mono crystalline, windows, 90 mm dia, 10 mm thick, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017158
Silicon sputtering target (with back plate), diam. x thickness 4 inch x 4 mm, 99.99%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-016288
Silicon sputtering target, diam. × thickness 2 inch × 3 mm, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-016290
Silicon sputtering target, diam. × thickness 50 mm × 6 mm, 99.99%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-016291
Silicon sputtering target, diam. x thickness 4 inch x 4 mm, 99.99%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-016289
Silicon substrate (single side polished), P-type, diam. × thickness 1 in. × 300 - 400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017159
Silicon substrate (single side polished), P-type, diam. × thickness 2 in. × 300 - 400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017160
Silicon substrate, single side polished, 10 mm x 10 mm x 1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017161
Silicon substrate, single side polished, P-type, contains boron as dopant, diam. × thickness 25 mm × 1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017162
Silicon substrate, single side polished, P-type, contains boron as dopant, diam. × thickness 50 mm × 1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017163
Silicon wafer (double side polished), Intrinsic, dia x thickness 100 mm x 500 µm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017165
Silicon wafer (double side polished), Intrinsic, dia x thickness 150 mm x 625 µm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017166
Silicon wafer (single side polished), diam. × thickness 50.8 mm × 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017167
Silicon wafer (single side polished), N (Phosphorous doped), diam. x thickness 50.8 mm x 280 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017168
Silicon wafer (single side polished), N (Phosphorous doped), diam. x thickness 76 mm x 380 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017169
Silicon wafer (single side polished), N-type, contains phosphorus as dopant, diam. x thickness 2 in. x 0.275 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017170
Silicon wafer (single side polished), N-type, contains phosphorus as dopant, diam. x thickness 2 in. x 0.5 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017171
Silicon wafer (single side polished), N-type, diam. x thickness 4 in x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017172
Silicon wafer (single side polished), P-type, contains boron as dopant, diam. × thickness 2 in. x 0.5 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017174
Silicon wafer (single side polished), P-type, contains boron as dopant, diam. x thickness 2 in. x 0.5 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017173
Silicon wafer (single side polished), P-type, diam. x thickness 2 in x 285 µm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017357
Silicon wafer (single substrase), n-type, contains Arsenic as dopant, diam. × thickness 4 in. × 0.2 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017358
Silicon wafer (single substrase), N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017359
Silicon wafer (single substrase), n-type, contains Phosphorus as dopant, diam. × thickness 2 inch x 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017360
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. × thickness 2 in. × 0.1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017362
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. x thickness 100 mm x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017361
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, size × thickness 125 mm × 125 mm × 0.2 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017363
Silicon wafer (single substrase), p-type, contains Boron as dopant, diam. × thickness 2 inch x 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017364
Silicon wafer, both side polished, N-type, single crystal, dia x thickness 2 in x 280 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017175
Silicon wafer, both side polished, N-type, single crystal, dia x thickness 3 in x 500 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017176
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 100 mm x 525 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017178
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 2 in x 250 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017179
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 4 in x 525 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017180
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 4 inch × 0.525mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017181
Silicon wafer, P/N-type semi insulating, diam. × thickness 3 in x 500-600 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017182
Silicon wafer, single crystal, dia x thickness 3 in x 0.1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017183
Silicon wafer, single crystal, dia x thickness 3 in x 0.25 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017184
Silicon wafer, single crystal, single side polished, dia x thickness 100 mm x 500 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017185
Silicon wafer, single side polished, N-type, diam. x thickness 1 in. x 300-400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017186
Silicon wafer, single side polished, P-type, diam. x thickness 1 in. x 300-400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017187
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