Aluminium oxide (Substrate N type) (GaN templates), 10 x 10mm, Orientation (0001)
- CAS
- 1344-28-1
- Formula
- Al2O3
- MW
- 101.96 g/mol
ZX-017319
Materials Science
Single Crystal Substrates & Wafers
Sapphire, GaN template, FTO glass and other single-crystal and polycrystalline substrates and wafers in defined orientations and sizes.
Aluminium oxide (substrate) 10 x 10 x 0.5 mm, Orientation (10-10)
- CAS
- 1344-28-1
- Formula
- Al2O3
- MW
- 101.96 g/mol
ZX-017320
Aluminium oxide single crystal substrate, (C-Plane, 10 x 10 x 0.5 mm)
- CAS
- 1344-28-1
- Formula
- Al2O3
- MW
- 101.96 g/mol
ZX-017322
Aluminium oxide single crystal substrate, Orientation: +/-0.3degree, Size: 10 x 10 x 1.0 mm
- CAS
- 1344-28-1
- Formula
- Al2O3
- MW
- 101.96 g/mol
ZX-017323
Aluminium oxide substrate, polycrystalline, 96%, L × W × thickness 10 mm × 10 mm × 0.5 mm
- CAS
- 1344-28-1
- Formula
- Al2O3
- MW
- 101.96 g/mol
ZX-017324
Aluminium oxide substrate, polycrystalline, 96%, L × W × thickness 25.4 mm × 25.4 mm × 0.5 mm
- CAS
- 1344-28-1
- Formula
- Al2O3
- MW
- 101.96 g/mol
ZX-017325
Gallium oxide, single crystal substrates, 10 mm x 10 mm x 0.6 mm
- CAS
- 12024-21-4
- Formula
- Ga2O3
- MW
- 187.44 g/mol
ZX-017330
Indium tin oxide coated, glass substrate, 10 x 10 x 0.7 mm3
- CAS
- 50926-11-9
- Formula
- InOSn
- MW
- 249.53 g/mol
ZX-017332
Indium tin oxide coated, glass substrate, 100 x 100 x 1.1 mm
- CAS
- 50926-11-9
- Formula
- InOSn
- MW
- 249.53 g/mol
ZX-017333
Indium tin oxide coated, glass substrate, 20 x 20 x 1 mm
- CAS
- 50926-11-9
- Formula
- InOSn
- MW
- 249.53 g/mol
ZX-017334
Indium tin oxide coated, glass substrate, 25 x 25 x 0.7 mm
- CAS
- 50926-11-9
- Formula
- InOSn
- MW
- 249.53 g/mol
ZX-017335
Indium tin oxide coated, glass substrate, Size: 10 x 10 x 1 mm
- CAS
- 50926-11-9
- Formula
- InOSn
- MW
- 249.53 g/mol
ZX-017336
LSAT single crystal substrate, 10 x 10 x 0.5 mm, Orientation, 99.9%+
- Formula
- (LaAlO3)3(Sr2AlTaO6)7
- MW
- 3995.82 g/mol
ZX-017338
LSAT single crystal substrate, 10 x 10 x 0.5 mm, Orientation, 99.99%
- Formula
- (LaAlO3)3(Sr2AlTaO6)7
- MW
- 3995.82 g/mol
ZX-017339
Magnesium aluminate, single crystal substrates, 10 mm × 10 mm × 0.5 mm
- CAS
- 12068-51-8
- Formula
- Al2MgO4
- MW
- 142.27 g/mol
ZX-017340
Magnesium oxide (single crystal substrate), ≥99.9% trace metals basis, L × W × thickness 10 mm × 10 mm × 0.2 mm
- CAS
- 1309-48-4
- Formula
- MgO
- MW
- 40.3 g/mol
ZX-017341
Magnesium oxide (single crystal substrate), ≥99.9% trace metals basis, L × W × thickness 10 mm × 10 mm × 0.5 mm
- CAS
- 1309-48-4
- Formula
- MgO
- MW
- 40.3 g/mol
ZX-017342
Thin-film growth and device research begin with the right substrate, as orientation, lattice match and surface finish control film quality. This sub-category supplies single-crystal and polycrystalline substrates and wafers. Examples include sapphire (aluminium oxide) single-crystal substrates in C-plane and (10-10) orientations at 10 x 10 x 0.5 mm, GaN templates on sapphire, polycrystalline 96% alumina substrates at 10 mm and 25.4 mm square, and Fluorine-doped tin oxide (FTO) coated glass at 50 x 50 x 2.2 mm.
Buyers state material, orientation with tolerance, size, thickness and polish, either one side or both sides. Surface roughness matters for epitaxy, while sheet resistance and transmittance matter for conductive glass. Polycrystalline alumina substrates are chosen for thick-film circuits and sensors, where flatness and thermal properties count more than crystal orientation.
- Sapphire and GaN templates for epitaxial growth
- FTO glass for solar cells and electrochemistry
- Alumina substrates for thick-film and sensor work
Substrates ship in clean wafer boxes or cassettes. Custom orientations and sizes are quoted on request.
Single Crystal Substrates & Wafers: questions buyers ask
How do I choose substrate orientation?
Orientation sets the atomic arrangement at the surface, which controls how a film grows. C-plane sapphire is standard for GaN, while A-plane, R-plane and M-plane suit other films or polar-free growth. Follow the orientation used in literature for your material, and specify the tolerance, often within 0.3 degrees.
What does a GaN template offer over bare sapphire?
A GaN template is a sapphire substrate already coated with a thin gallium nitride layer. It lets researchers start growth or processing on GaN directly, skipping the difficult nucleation step. This saves time and gives a better starting surface for LEDs, transistors and sensor studies.
How should substrates be cleaned before use?
A typical routine is sonication in acetone, then isopropanol, followed by a deionised water rinse and drying with nitrogen. Some processes add plasma or acid cleaning. Avoid touching the polished surface, and handle substrates with clean tweezers. Use the cleaning steps your growth process specifies.
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