Silicon wafer, P-type, contains boron as dopant, diam. × thickness 4 in x 525 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017180
Inorganics & Metals
Crystal Optics & Photonics
Optical lenses, prisms, windows, mirrors, filters, beam splitters and laser crystals for photonics labs, spectroscopy and imaging systems.
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 4 inch × 0.525mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017181
Silicon wafer, P/N-type semi insulating, diam. × thickness 3 in x 500-600 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017182
Silicon wafer, single crystal, dia x thickness 3 in x 0.1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017183
Silicon wafer, single crystal, dia x thickness 3 in x 0.25 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017184
Silicon wafer, single crystal, single side polished, dia x thickness 100 mm x 500 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017185
Silicon wafer, single side polished, N-type, diam. x thickness 1 in. x 300-400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017186
Silicon wafer, single side polished, P-type, diam. x thickness 1 in. x 300-400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017187
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