Catalog division
Inorganics & Metals
Inorganic salts, rare earths, high-purity metals, nanomaterials, sputtering targets, optics and advanced ceramics for research, electronics and industry.
Silicon sputtering target (with back plate), diam. x thickness 4 inch x 4 mm, 99.99%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-016288
Silicon sputtering target, diam. × thickness 2 inch × 3 mm, 99.999%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-016290
Silicon sputtering target, diam. × thickness 50 mm × 6 mm, 99.99%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-016291
Silicon sputtering target, diam. x thickness 4 inch x 4 mm, 99.99%
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-016289
Silicon substrate (single side polished), P-type, diam. × thickness 1 in. × 300 - 400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017159
Silicon substrate (single side polished), P-type, diam. × thickness 2 in. × 300 - 400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017160
Silicon substrate, single side polished, 10 mm x 10 mm x 1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017161
Silicon substrate, single side polished, P-type, contains boron as dopant, diam. × thickness 25 mm × 1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017162
Silicon substrate, single side polished, P-type, contains boron as dopant, diam. × thickness 50 mm × 1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017163
Silicon wafer (double side polished), Intrinsic, dia x thickness 100 mm x 500 µm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017165
Silicon wafer (double side polished), Intrinsic, dia x thickness 150 mm x 625 µm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017166
Silicon wafer (single side polished), diam. × thickness 50.8 mm × 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017167
Silicon wafer (single side polished), N (Phosphorous doped), diam. x thickness 50.8 mm x 280 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017168
Silicon wafer (single side polished), N (Phosphorous doped), diam. x thickness 76 mm x 380 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017169
Silicon wafer (single side polished), N-type, contains phosphorus as dopant, diam. x thickness 2 in. x 0.275 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017170
Silicon wafer (single side polished), N-type, contains phosphorus as dopant, diam. x thickness 2 in. x 0.5 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017171
Have a list of compounds to price?
Paste up to 200 CAS numbers into Bulk CAS lookup, or send one enquiry for everything in your quote list. We reply with price, lead time and documents.