Silicon wafer (single side polished), N-type, diam. x thickness 4 in x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017172
Catalog division
Inorganics & Metals
Inorganic salts, rare earths, high-purity metals, nanomaterials, sputtering targets, optics and advanced ceramics for research, electronics and industry.
Silicon wafer (single side polished), P-type, contains boron as dopant, diam. × thickness 2 in. x 0.5 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017174
Silicon wafer (single side polished), P-type, contains boron as dopant, diam. x thickness 2 in. x 0.5 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017173
Silicon wafer (single side polished), P-type, diam. x thickness 2 in x 285 µm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017357
Silicon wafer (single substrase), n-type, contains Arsenic as dopant, diam. × thickness 4 in. × 0.2 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017358
Silicon wafer (single substrase), N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017359
Silicon wafer (single substrase), n-type, contains Phosphorus as dopant, diam. × thickness 2 inch x 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017360
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. × thickness 2 in. × 0.1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017362
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, diam. x thickness 100 mm x 0.525 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017361
Silicon wafer (single substrase), p-type, contains Boron (B) as dopant, size × thickness 125 mm × 125 mm × 0.2 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017363
Silicon wafer (single substrase), p-type, contains Boron as dopant, diam. × thickness 2 inch x 0.3 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017364
Silicon wafer, both side polished, N-type, single crystal, dia x thickness 2 in x 280 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017175
Silicon wafer, both side polished, N-type, single crystal, dia x thickness 3 in x 500 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017176
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 100 mm x 525 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017178
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 2 in x 250 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017179
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 4 in x 525 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017180
Silicon wafer, P-type, contains boron as dopant, diam. × thickness 4 inch × 0.525mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017181
Silicon wafer, P/N-type semi insulating, diam. × thickness 3 in x 500-600 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017182
Silicon wafer, single crystal, dia x thickness 3 in x 0.1 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017183
Silicon wafer, single crystal, dia x thickness 3 in x 0.25 mm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017184
Silicon wafer, single crystal, single side polished, dia x thickness 100 mm x 500 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017185
Silicon wafer, single side polished, N-type, diam. x thickness 1 in. x 300-400 μm
- CAS
- 7440-21-3
- Formula
- Si
- MW
- 28.09 g/mol
ZX-017186
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